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-FeSi
filmsIgarashi, Shinichi; Katsumata, Toshinobu; Haraguchi, Masaharu; Saito, Takeru; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi
Transactions of the Materials Research Society of Japan, 28(4), p.1153 - 1156, 2003/12
We have evaluated the crystal structure of the -FeSi films formed with various sputter etching of Si substrate. Ne
sputter etching of Si (100) substrate was performed with ion energies of 1, 3, and 10 keV. After each etching, the substrate was annealed at a temperature of 1073 K for 30 min. The -FeSi films of 100 nm in thickness were formed at 973 K with the amount of deposited Fe, 30 nm. X-ray diffraction revealed that these films have polycrystalline -FeSi structure but strong preferential orientation aligned as -FeSi (100) // Si (100). Furthermore, the oriented structure of the film was improved by lowering the incident energy of Ne.
Yamaki, Tetsuya; Ito, Hisayoshi; Matsubara, Masakazu*; Abe, Hiroaki*; Asai, Keisuke*
Transactions of the Materials Research Society of Japan, 28(3), p.879 - 882, 2003/10
Titanium oxide nanoparticles were formed by pulsed laser ablation of a TiO rutile pellet with a KrF excimer laser (
= 248 nm). The ablation was performed in atmospheres of Ar and O at total pressures ranging from 0.2 and 10 Torr. At a higher pressure than 1 Torr, Ti in the nanoparticles had an oxidation state of 4+ to form TiO. According to the X-ray diffraction analyses, the nanopartiles were found to contain both the anatase and rutile phases, which crystallized through extremely energetic, non-equilibrium reactions in an ablation plume. In contrast, at pressures of 0.2 and 0.5 Torr, the nanoparticles were composed of dominant TiO with a small amount of a less oxidized phase such as TiO
. The important result is that the XRD patterns of the samples prepared at 1 and 5 Torr showed the different anatase-to-rutile ratio of the peak intensities. This indicates that the weight fraction of the rutile/anatase crystalline phases can be controlled by the ambient gas pressure.
by ion implantationUmebayashi, Tsutomu; Yamaki, Tetsuya; Yamamoto, Shunya; Tanaka, Shigeru; Asai, Keisuke*
Transactions of the Materials Research Society of Japan, 28(2), p.461 - 464, 2003/06
TiO is promising as a photocatalytic material. However, it is active only under UV light irradiation because of its wide band gap (
3.0 eV). We recently reported that sulfur (S) doping caused the optical absorption edge of TiO to be shifted into the lower energy region. Based on the theoretical analyses using first principles band calculations, mixing of the S 3p states with the valence band was found to contribute to the bandgap narrowing. In this study presented here, S-doped TiO was prepared by ion implantation and subsequent thermal annealing. S was implanted into the single crystals of rutile TiO with a fluence of 8 
10
ions/cm
. According to the results of RBS/channeling analysis, irradiation damage recovered after the annealing at 600 
C in air. In the annealed crystal, S atoms occupied O sites to form Ti-S bonds, as assessed by XPS.